Optoelectronic semiconductor component

ABSTRACT

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the optoelectronic semiconductor chip is a flip-chip having the electrical contract locations only at one side, either the underside or the top side, the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip.

RELATED APPLICATIONS

This application is a continuation of U.S. Ser. No. 15/288,176, filedOct. 7, 2016, which is a continuation of U.S. Ser. No. 14/931,246, filedNov. 3, 2015, which is a divisional of U.S. Ser. No. 14/223,173, filedMar. 24, 2014, which is a divisional of U.S. Ser. No. 13/320,304, filedJan. 23, 2012, which is a § 371 of International Application No.PCT/EP2010/060434, with an international filing date of Jul. 19, 2010,which is based on German Patent Application No. 10 2009 036 621.0, filedAug. 7, 2009.

TECHNICAL FIELD

This disclosure relates to methods of producing optoelectronicsemiconductor components and optoelectronic semiconductor componentsmade by the methods.

BACKGROUND

WO 2009/075753 A2 and WO 02/084749 each describe an optoelectronicsemiconductor component. However, it could be helpful to provide asimplified production method of producing optoelectronic semiconductorcomponents and components produced thereby.

SUMMARY

We provide a method of producing an optoelectronic semiconductorcomponent including providing a carrier, arranging at least oneoptoelectronic semiconductor chip at a top side of the carrier, shapinga shaped body around the at least one optoelectronic semiconductor chip,wherein the shaped body covers all side areas of the at least oneoptoelectronic semiconductor chip, and wherein a surface facing awayfrom the carrier at the top side and/or a surface facing the carrier atan underside of the at least one semiconductor chip remainssubstantially free of the shaped body or is exposed, and removing thecarrier.

We also provide an optoelectronic semiconductor component including anoptoelectronic semiconductor chip having side areas covered by a shapedbody, at least one plated-through hole including an electricallyconductive material, and an electrically conductive connectionelectrically conductively connected to the semiconductor chip and theplated-through hole, wherein the plated-through hole is laterally spacedapart from the semiconductor chip, the plated-through hole completelypenetrates through the shaped body, the plated-through hole extends froma top side of the shaped body to an underside of the shaped body, andthe electrically conductive connection extends at the top side of theshaped body.

We further provide an optoelectronic semiconductor component includingan optoelectronic semiconductor chip having side areas covered by ashaped body, and an electrically conductive connection electricallyconductively connected to the semiconductor chip and the plated-throughhole, wherein the plated-through hole is laterally spaced apart from thesemiconductor chip, the plated-through hole completely penetratesthrough the shaped body, the plated-through hole extends from a top sideof the shaped body to an underside of the shaped body, and the shapedbody is optically reflective.

We further yet provide an optoelectronic semiconductor componentincluding an optoelectronic semiconductor chip having side areas, asurface at a top side of the semiconductor chip, and a surface at abottom side of the semiconductor chip; a shaped body having a surface ata top side of the shaped body and a surface at an underside of theshaped body; at least one plated-through hole including an electricallyconductive material; and an electrically conductive connectionelectrically conductively connected to the semiconductor chip and theplated-through hole, wherein the side areas of the optoelectronicsemiconductor chip are covered by the shaped body, and the surface atthe top side and/or the surface at the bottom side of the optoelectronicsemiconductor chip are completely free of the shaped body.

We also further provide an optoelectronic semiconductor componentincluding an optoelectronic semiconductor chip having side areas, asurface at a top side of the semiconductor chip, and a surface at abottom side of the semiconductor chip; a shaped body having a surface ata top side of the shaped body and a surface at an underside of theshaped body; at least one plated-through hole including an electricallyconductive material; and an electrically conductive connectionelectrically conductively connected to the semiconductor chip and theplated-through hole, wherein the side areas of the optoelectronicsemiconductor chip are covered by the shaped body, and the shaped bodycovers the side areas of the semiconductor chip up to a selected heightsuch that the side areas of the semiconductor chip are free of theshaped boy in places or the surface at the top side and the surface atthe underside of the shaped body terminates flush with the surface atthe top side and the surface at the bottom side of the semiconductorchip, respectively.

We also further provide an optoelectronic semiconductor componentincluding an optoelectronic semiconductor chip having side areas, asurface at a top side of the semiconductor chip, and a surface at abottom side of the semiconductor chip; and a shaped body having asurface at a top side of the shaped body and a surface at an undersideof the shaped body, wherein the side areas of the optoelectronicsemiconductor chip are covered by the shaped body, and the surface atthe top side and/or the surface at the bottom side of the optoelectronicsemiconductor chip are free of the shaped body.

We also further provide an optoelectronic semiconductor componentincluding an optoelectronic semiconductor chip having side areas coveredby a shaped body, at least one via including an electrically conductivematerial, and at least one electrically conductive connectionelectrically conductively connected to the semiconductor chip and thevia, wherein the via is laterally spaced apart from the semiconductorchip, the via includes a contact pin, the contact pin including anelectrically conductive material, and the contact pin is laterallycompletely enclosed by the shaped body.

We also further provide an optoelectronic semiconductor componentincluding an optoelectronic semiconductor chip having side areas coveredby a shaped body, at least one plated-through hole including anelectrically conductive material, and an electrically conductiveconnection electrically conductively connected to the semiconductor chipand the plated-through hole, wherein the plated-through hole islaterally spaced apart from the semiconductor chip, and the electricallyconductive connection extends at a top side of the shaped body beneathan outer area of the shaped body.

We also further provide an optoelectronic semiconductor componentincluding an optoelectronic semiconductor chip having side areas coveredby a shaped body, at least one plated-through hole including anelectrically conductive material, an electrically conductive connectionelectrically conductively connected to the semiconductor chip and theplated-through hole, and a phosphor layer containing or consisting of aphosphor that absorbs electromagnetic radiation generated by thesemiconductor chip during operation and re-emits electromagneticradiation in a different wavelength range from the optoelectronicsemiconductor chip, wherein the plated-through hole is laterally spacedapart from the semiconductor chip, the plated-through hole completelypenetrates through the shaped body, the plated-through hole extends froma top side of the shaped body to an underside of the shaped body, theelectrically conductive connection extends at the top side of the shapedbody, and the phosphor layer covers the optoelectronic semiconductorchip and the shaped body.

We also further provide an optoelectronic semiconductor componentincluding an optoelectronic semiconductor chip having a top area at atop side, a bottom area at an underside and side areas connecting thetop area and the bottom area, electrical contact locations at the toparea or at the bottom area of the optoelectronic semiconductor chip, andan electrically insulating shaped body wherein the optoelectronicsemiconductor chip is a flip-chip having the electrical contactlocations only at one side, either the underside or the top side, theshaped body surrounds the optoelectronic semiconductor chip at its sideareas, and the shaped body is free of a via that electrically connectsthe optoelectronic semiconductor chip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional schematic illustration of an exemplaryoptoelectronic semiconductor component during a step of an exemplarymethod of producing the same.

FIG. 2 is a sectional schematic illustration of the exemplaryoptoelectronic semiconductor component depicted in FIG. 1 during afurther step of the exemplary method.

FIG. 3 is a sectional schematic illustration of the exemplaryoptoelectronic semiconductor component depicted in FIG. 2 during afurther step of the exemplary method.

FIG. 4 is a sectional schematic illustration of an exemplaryoptoelectronic semiconductor component.

FIG. 5 is a sectional schematic illustration of a further exemplaryoptoelectronic semiconductor component.

FIG. 6 is a sectional schematic illustration of an exemplaryoptoelectronic semiconductor component during a further step of anexemplary method of producing the same.

FIG. 7 is a sectional schematic illustration of an exemplaryoptoelectronic semiconductor component during another step of anexemplary method of producing the same.

FIG. 8 is a schematic top perspective view of an exemplaryoptoelectronic semiconductor component.

FIG. 9 is a schematic bottom perspective view of the exemplaryoptoelectronic semiconductor component depicted in FIG. 8.

FIG. 10 is a schematic plan view of another exemplary optoelectronicsemiconductor component.

DETAILED DESCRIPTION

We provide a method of producing an optoelectronic semiconductorcomponent. The optoelectronic semiconductor component is, for example, alight emitting diode that emits electromagnetic radiation.Alternatively, the optoelectronic semiconductor component can also be aphotodiode provided for detecting electromagnetic radiation.

A carrier may first be provided. The carrier is a temporary carrierremoved again in a final method step. The carrier can be, for example, afoil, a circuit board or generally a plate which is formed with aplastics material, a metal, a ceramic material or a semiconductormaterial.

At least one optoelectronic semiconductor chip may be arranged on thecarrier at a top side of the carrier. The optoelectronic semiconductorchip is, for example, a light emitting diode chip or a photo diode chip.Furthermore, the optoelectronic semiconductor chip can be a laser diodechip. The at least one optoelectronic semiconductor chip is preferablyfixed on the carrier to produce a mechanical connection between theoptoelectronic semiconductor chip and the carrier, which later can bereleased nondestructively for the optoelectronic semiconductor chip. Inother words, a sacrificial layer is arranged between the semiconductorchip and the carrier. The optoelectronic semiconductor chip can be fixedon the carrier by an adhesive, for example.

Preferably, a multiplicity of optoelectronic semiconductor chips arefixed on the carrier. The arrangement composed of the carrier and themultiplicity of optoelectronic semiconductor chips is then a so-called“artificial” wafer wherein a multiplicity of optoelectronicsemiconductor chips preferably of the same type are arranged on a commoncarrier.

A shaped body may be shaped around the at least one optoelectronicsemiconductor chip, preferably the multiplicity of optoelectronicsemiconductor chips, wherein the shaped body covers all side areas ofthe at least one optoelectronic semiconductor chip. In other words, theat least one optoelectronic semiconductor chip is enveloped by theshaped body. The shaping-around or enveloping process can be effected,for example, by injection molding, casting, printing, lamination of afoil or the like. The shaped body is formed from a mechanicallystabilizing material such as, for example, a plastic, a glass having alow melting point or a glass ceramic having a low melting point. Theshaped body can, for example, contain epoxy resin, silicone,epoxy-silicon hybrid material, glass or glass ceramic or consist of oneof these materials.

The shaped body is applied on the carrier such that it covers thatsurface of the carrier facing the at least one optoelectronicsemiconductor chip, and is in direct contact with the surface.Furthermore, the shaped body is in direct contact at least in placeswith the side areas running, for example, transversely orperpendicularly with respect to the surface of the carrier. In thiscase, it is possible for all side areas of the at least onesemiconductor chip to be completely covered by the shaped body. However,it is also possible for the semiconductor chips to be covered by theshaped body only up to a specific height at the side areas and for partsof the at least one semiconductor chip to project from the shaped bodysuch that the side areas of the at least one optoelectronicsemiconductor chip are free of the shaped body in places. Furthermore,it is also possible for the shaped body to completely cover thesemiconductor chips at their exposed areas. That is to say, a surface ofthe at least one optoelectronic semiconductor chip facing away from thecarrier can also be covered by the shaped body.

The carrier may be removed. That is to say, after the process of shapingaround the at least one optoelectronic semiconductor chip, the carrieris removed from the composite assembly composed of shaped body andoptoelectronic semiconductor chip. Removal can be effected, for example,by heating or thinning the carrier. Heating can be effected by a laserbeam, for example. Thinning can be effected by grinding back thecarrier, for example. Furthermore, it is possible for removal to beeffected by chemical stripping or stripping the carrier or the adhesionlayer present, if appropriate, on the carrier. After the carrier hasbeen removed, the underside of the at least one optoelectronicsemiconductor chip, the underside originally facing the carrier, isfreely accessible. The underside can also be the emission side of thesemiconductor chip through which radiation emerges from thesemiconductor chip during the operation thereof. In other words, thesemiconductor chip is then applied “face-down” onto the carrier. Allside areas of the at least one optoelectronic semiconductor chip arecovered by the shaped body at least in places. That is to say, after theremoval of the carrier, the shaped body constitutes a mechanicallystabilizing body surrounding the at least one optoelectronicsemiconductor chip at its side areas and connects, if present, amultiplicity of optoelectronic semiconductor chips to one another.

The method of producing an optoelectronic semiconductor componentcomprises:

-   -   providing a carrier;    -   arranging at least one optoelectronic semiconductor chip at a        top side of the carrier;    -   shaping a shaped body around the at least one optoelectronic        semiconductor chip wherein the shaped body covers all side areas        of the at least one optoelectronic semiconductor chip; and    -   removing the carrier.

In this case, the method steps described are preferably carried out inthe order specified.

A multiplicity of optoelectronic semiconductor chips may be arranged atthe top side of the carrier, wherein each of the semiconductor chips isprovided during operation to generate electromagnetic radiation in awavelength range having a peak wavelength assigned to the semiconductorchip. That is to say, each of the semiconductor chips is suitable forgenerating electromagnetic radiation. In this case, the semiconductorchip generates electromagnetic radiation in a specific wavelength rangeduring operation. The electromagnetic radiation generated has a maximumin the wavelength range at a specific wavelength, the peak wavelength.In other words, the peak wavelength is the dominant wavelength of theelectromagnetic radiation generated by the semiconductor chip duringoperation.

In this case, the peak wavelength of each of the semiconductor chipsdeviates from an average value of the peak wavelengths of all theoptoelectronic semiconductor chip by at most +/−2%. That is to say, theoptoelectronic semiconductor chips are optoelectronic semiconductorchips that emit electromagnetic radiation at the same or similarwavelengths. Preferably, the peak wavelength of each of thesemiconductor chips deviates from an average value of the peakwavelengths of all the optoelectronic semiconductor chips at most by+/−1%, particularly preferably by at most +/−0.5%.

In other words, the optoelectronic semiconductor chips arranged on thecarrier are presorted with regard to their emission wavelength. Thoseoptoelectronic semiconductor chips scarcely differing from one anotheror not differing from one another at all in terms of their peakwavelength are arranged jointly on the carrier.

By way of example, the optoelectronic semiconductor chips are sortedwith regard to their peak wavelength after their production (so-called“binning”). Those optoelectronic semi-conductor chips classified into acommon group during this sorting are arranged on the carrier.

A common phosphor layer may be disposed downstream of the optoelectronicsemiconductor chips at their top side or their underside before or afterthe shaping-around process. In this case, “common phosphor layer” meansthat a phosphor layer having the same or similar properties is disposeddownstream of all the optoelectronic semiconductor chips. That is tosay, the phosphor layer of all the optoelectronic semiconductor chipsconsists, for example, of the same material and has the same thickness.

The phosphor layer contains or consists of a phosphor provided absorbthe electromagnetic radiation generated by the semiconductor chipsduring operation and re-emits electromagnetic radiation in a differentwavelength range than the optoelectronic semiconductor chips. By way ofexample, the optoelectronic semiconductor chips generate blue lightduring operation and yellow light is re-emitted by the phosphor of thephosphor layer, the yellow light mixing with the blue light to formwhite light. The phosphor layer can be applied, for example, in the formof phosphor particles introduced in a matrix material such as, forexample, silicone or ceramic. Furthermore, the phosphor layer can beapplied as a ceramic lamina containing the phosphor or consists of aceramic phosphor to that surface of the semiconductor chips facing awayfrom the carrier. In this case, it is possible for the phosphor layer tobe applied directly to that surface of the optoelectronic semiconductorchips facing away from the carrier.

Particularly preferably, the optoelectronic semiconductor chips, as justdescribed, are similar optoelectronic semiconductor chips scarcelydiffering or not differing from one another at all with regard to theirpeak wavelength. Advantageously, a common phosphor layer can be disposeddownstream of these similar optoelectronic semiconductor chips. Onaccount of the similarity of the optoelectronic semiconductor chips andthe common phosphor layer, the optoelectronic semiconductor chips emitduring operation mixed light having similar or identical properties.Unlike otherwise customary production of optoelectronic semiconductorcomponents, therefore, it is not necessary for an appropriate phosphorlayer to be disposed downstream of each optoelectronic semiconductorchip such that a desired mixed radiation composed of the electromagneticradiation emitted directly by the optoelectronic semiconductor chip andthe electromagnetic radiation re-emitted by the phosphor layer isestablished.

The top side, facing away from the carrier, of the at least onesemiconductor chip may be freed of the shaped body or it remains free ofthe shaped body. That is to say, the shaped body is either applied suchthat that the surface of the at least one semiconductor chip facing awayfrom the carrier is not covered with the material of the shaped body.Alternatively, the shaped body can be removed again from the top side ofthe semiconductor chips after the shaped body has been applied. By wayof example, the phosphor layer can then be applied to the surface freeof the shaped body.

However, it is also possible for the semiconductor chips to be fixedonto the carrier by their emission side. Upon removal of the carrier,the surface facing the carrier, that is to say, the underside isexposed. In this variant of the method, at least one connection contactcan be situated on the emission side of each of the semiconductor chips.

At least one plated-through hole with an electrically conductivematerial may be produced before or after the shaping-around process foreach semiconductor chip. The plated-through hole is laterally spacedapart from the assigned semiconductor chip. That is to say, in adirection running, for example, parallel to the surface of the carrierassigned to the semiconductor chips, a plated-through hole is producedat a distance from the semiconductor chip. In this case, theplated-through hole completely penetrates through the shaped body andextends from a top side of the shaped body to an underside of the shapedbody. After conclusion of the method, that is to say, after removal ofthe carrier, the plated-through hole is freely accessible at least atthe underside of the shaped body. At the top side of the shaped body,the plated-through hole can be covered by the phosphor layer.

Before the shaped body is shaped around, the plated-through hole can beproduced by contact pins, for example, arranged at the top side of thecarrier between the semiconductor chips before the shaping-aroundprocess. In this case, the contact pins are formed from an electricallyconductive material such as copper, for example. In this case, thecontact pins can also be formed integrally with the carrier. That is tosay, a substrate with plated-through holes present is used as thecarrier. Furthermore, the carrier can also be a leadframe.

Alternatively, it is possible for the plated-through holes to beproduced by the production of cutouts in the shaped body after theprocess of shaping around the semiconductor chip. By way of example, bylaser drilling or other types of material removal, it is possible toproduce holes in the shaped body that completely penetrate through theshaped body and extend from the top side thereof to the undersidethereof. These holes are then filled with a conductive material. Theconductive material can be, for example, a plating, a solder material ora conductive adhesive.

An electrically conductive connection may be produced between theplated-through hole and the assigned semiconductor chip. In this case,the electrically conductive connection electrically conductivelyconnects to the surface facing away from the carrier at the top side ofthe semiconductor chip and extends along the top side of the shapedbody. The electrically conductive connection electrically conductivelycontacts, for example, a bonding pad at the top side of the assignedsemiconductor chip and extends as far as the plated-through hole. Inthis case, the connection extends at the top side of the shaped bodyeither on the outer area of the shaped body or closely beneath the outerarea of the shaped body. The electrically conductive connection can beproduced by sputtering, photolithography, plating and/or etching-back.Furthermore, it is possible, for the purpose of producing theelectrically conductive connection, for insulation material and metal tobe applied by printing, to be applied as a metal paste by a sinteringmethod (particularly if the shaped body is formed from a ceramicmaterial), to be applied as conductive adhesive or the like. Thus, it isalso possible, for example, for the electrically conductive connectionsto be applied by an injection-molding method. That is to say, theelectrically conductive connections are then applied in the manner of a“molded interconnected device” (MID).

Production of plated-through holes and assigned electrically conductiveconnections is advantageous if the optoelectronic semiconductor chipshave electrically conductive contact locations at their top side andunderside facing away from the top side. Alternatively, the use offlip-chip semiconductor chips is possible, having electrical contactlocations only at one side, either the underside or the top side. Thethrough-plating through the shaped body can be obviated in this case.

We also provided an optoelectronic semiconductor component. Theoptoelectronic semiconductor component can preferably be produced by oneof the methods described here. That is to say, all the featuresdisclosed for the method are also disclosed for the optoelectronicsemiconductor component, and vice versa.

The optoelectronic semiconductor component may comprise anoptoelectronic semiconductor chip, the side areas of which are coveredby a shaped body. In this case, the side areas are those areas runningtransversely with respect to the outer area of the optoelectronicsemiconductor chip at its top side and its underside and connect theouter areas to one another. In this case, the side areas can becompletely covered by the shaped body. Furthermore, it is also possiblefor the side areas to be covered by the shaped body only up to aspecific height. By way of example, the optoelectronic semiconductorchip can be a semiconductor chip in which semiconductor layers aredeposited epitaxially onto a substrate. It is then possible for the sideareas of the semiconductor chip to be covered such that the epitaxiallyproduced layers are free of the shaped body. The epitaxially producedlayers can then be covered by a further material, for example, by aprinting process, or remain free.

The optoelectronic semiconductor component may comprise at least oneplated-through hole comprising an electrically conductive material. Theelectrically conductive material is, for example, a metal or anelectrically conductive adhesive.

The component may comprise an electrically conductive connectionelectrically conductively connected to the semiconductor chip and theplated-through hole. The electrically conductive connection is formed,for example, with a metal or an electrically conductive adhesive.

The plated-through hole may be laterally spaced apart from thesemiconductor chip. In this case, the lateral direction is thatdirection running transversely or perpendicularly with respect to theside areas of the optoelectronic semiconductor chip. That is to say, theplated-through hole is arranged laterally with respect to thesemiconductor chip and runs, for example, parallel or substantiallyparallel to a side area of the optoelectronic semiconductor chip. Inthis case, the plated-through hole preferably completely penetratesthrough the shaped body and extends from a top side of the shaped bodyto an underside of the shaped body. In this case, it is possible for theplated-through hole to be freely accessible at the top side and theunderside of the shaped body.

The electrically conductive connection may extend at the top side of theshaped body. That is to say, the electrically conductive connectionconnects the semiconductor chip to the plated-through hole and, in thiscase, runs between semiconductor body and plated-through hole at the topside of the shaped body. In this case, the electrically conductiveconnection can be arranged on an outer area of the shaped body.

The optoelectronic semiconductor component may comprise anoptoelectronic semiconductor chip, the side areas of which are coveredby a shaped body. Furthermore, the optoelectronic semiconductorcomponent comprises at least one plated-through hole comprising anelectrically conductive material and an electrically conductiveconnection electrically conductively connected to the semiconductor chipand the plated-through hole. In this case, the plated-through hole islaterally spaced apart from the semiconductor chip and penetratesthrough the shaped body completely. The plated-through hole extends froma top side of the shaped body to an underside of the shaped body and theelectrically conductive connection extends at the top side of the shapedbody from the semiconductor chip to the plated-through hole.

The shaped body may be optically reflective. This can be achieved, forexample, by introducing particles that reflect electromagneticradiation, in particular light, into a matrix material of the shapedbody. Electromagnetic radiation that emerges at the side areas of theoptoelectronic semiconductor chip can then be reflected by the shapedbody. In this case, the shaped body does not cover the optoelectronicsemiconductor chip at the top side thereof at least in places. Theparticles are formed, for example, with at least one material or containat least one material selected from the group consisting of TiO₂, BaSO₄,ZnO and Al_(x)O_(y). It is particularly advantageous if the shaped bodycontains silicone or consists of silicone and the particles consist oftitanium oxide.

Preferably, the particles are introduced into the shaped body in aconcentration such that the latter appears white.

Furthermore, it is possible for the shaped body to beradiation-transmissive. This is particularly advantageous foroptoelectronic semiconductor chips which emit a large proportion oftheir electromagnetic radiation through the side areas.

The semiconductor component may comprise a multiplicity of semiconductorchips electrically conductively connected to one another by electricallyconductive connections extending at the top side of the shaped body. Byway of example, the semiconductor chips can connect in series or inparallel by the electrically conductive connections. The semiconductorchips are in each case covered by the shaped body at their side areas.The shaped body constitutes a connection material to which theelectrically conductive semiconductor chips connect to form theoptoelectronic semiconductor component.

The method described here and also the optoelectronic semiconductorcomponent described here are explained in greater detail below on thebasis of examples and the associated figures.

Elements that are identical, of identical type or act identically areprovided with the same reference symbols in the figures. The figures andthe size relationships of the elements illustrated in the figures amongone another should not be regarded as to scale, but rather, individualelements may be illustrated with an exaggerated size to enable betterillustration and/or to afford a better understanding.

A first method step of producing an optoelectronic semiconductorcomponent is explained in greater detail on the basis of the schematicsectional illustration in FIG. 1. In the method, a carrier 1 is firstprovided. The carrier 1 is, for example, a carrier formed with a metalsuch as copper or aluminum, with a ceramic, with a semiconductormaterial or with a plastic. A multiplicity of optoelectronicsemiconductor chips 2 are arranged at the top side 1 a of the carrier 1,the chips being light emitting diode chips. The semiconductor chips 2are fixed to the carrier 1 by a connection means 5. The connection means5 is an adhesive, for example. In this case, the underside 2 b of thesemiconductor chips 2 faces the top side la of the carrier 1. A contactlocation 4 a provided for making electrical contact with thesemiconductor chip 2 is situated at the underside 2 b of thesemiconductor chips 2. By way of example, the contact location 4 a is ametalization at the underside 2 b of the semiconductor chip 2. Aradiation exit area of the semiconductor chip 2 can comprise the sideareas 2 c and the outer area at the top side 2 a.

In this case, it is possible for a contact location 4 a to be situatedat the top side 2 a and a contact location 4 b to be situated at theunderside 2 b. Furthermore, both contact locations 4 a, 4 b can besituated at the same side. Furthermore, it is possible for the underside2 b or the top side 2 a to be the emission side of the semiconductorchip 2. That is to say, the radiation exit area of the semiconductorchip 2 can comprise the side areas 2 c and the outer area at the topside 2 a and/or the underside 2 b.

A further method step is explained in conjunction with FIG. 2. In thismethod step, a shaped body 3 is applied, for example, by injectionmolding a molding compound such that the side areas 2 c of thesemiconductor chips 2 are covered by the shaped body and the shaped bodyconnects the semiconductor chips 2 to one another. In this case, theunderside 3 b of the shaped body is in direct contact with the carrier 1or the connection means 5 at the top side 1 a of the carrier 1. Theshaped body 3 can, at its top side 3 a, terminate flush with the surfaceat the top side 2 a of the semiconductor chip 2. Furthermore, it ispossible for the shaped body 3, in contrast to the illustration in FIG.2, to cover the side areas 2 c of the semiconductor chips 2 only up to aspecific height and for the semiconductor chips 2 to project beyond theshaped body 3 at the top side 3 a thereof.

The shaped body 3 can be radiation-transmissive, for example,transparent, radiation-absorbent or reflective.

In the method step explained in conjunction with FIG. 3, the carrier 1together with the connection means layer 5 optionally present isdetached from the shaped body and the semiconductor chips 2. Thereremains a composite assembly composed of semiconductor chips 2 connectedto one another by the shaped body 3. At the underside 2 b of thesemiconductor chips 2, the contact location 4 a and also the radiationpassage area, in the case of a “face-down” arrangement, is exposed.

In a further method step, illustrated schematically in FIGS. 4 and 5,the composite assembly of the semiconductor chips 2 can be singulated toform individual optoelectronic semiconductor components comprising oneor more semiconductor chips 2. The singulation produces side areas 3 cof the shaped body which have traces of material removal. By way ofexample, the side areas 3 c can have sawing grooves or grinding trackswhich originate from the singulation of the shaped body 3. Each of thesemiconductor chips 2 is covered by the shaped body 3 at least in placesat its side areas 2 c.

A further method step is explained with reference to the schematicsectional illustration in FIG. 6, which step can be carried out beforeor after the molding compound is shaped around the semiconductor chips 2and before or after the carrier is removed. This method step involvesproducing plated-through holes 6 made from an electrically conductivematerial which penetrate through the shaped body 3 from the top side 3 athereof to the underside 3 b thereof. The plated-through holes 6 arelaterally spaced apart from the semiconductor bodies 2. Eachsemiconductor body 2 is preferably assigned a plated-through hole. Inthis case, the assignment can also be one-to-one. Furthermore, it ispossible for one plated-through hole 6 to be present for a plurality ofsemiconductor chips 2. After the plated-through hole 6 has been producedan electrically conductive connection 7 is formed at the top side 3 a onthe surface of the shaped body 3, which electrically conductive connectsa contact location 4 c of the semiconductor chip 2 to the plated-throughhole 6. At the underside of the shaped body 3, the plated-through holes6 are freely accessible and form there a contact location 4 b for thesemiconductor component.

A further method step is explained with reference to FIG. 7 in aschematic sectional illustration, which step can take place after theshaped body has been applied. In this method step, a phosphor layer 8 atthe top side of the shaped body 3 is applied to the semiconductor chips2 at their top side 2 a. In this case, the phosphor layer 8 can beembodied continuously over all the semiconductor chips 2, as illustratedin FIG. 7. Furthermore, it is possible that a dedicated phosphor layercan be applied on each semiconductor chip 2. This can then also beeffected before the molding compound is applied. The optoelectronicsemiconductor chips in the example of FIG. 7 are preferably lightemitting diode chips having a similar or identical emissioncharacteristic, that is to say having a similar or identical peakwavelength as described further above. A uniform phosphor layer 8 isapplied to the semiconductor chips 2. This results in optoelectronicsemiconductor components having similar or identical emissioncharacteristics. By way of example, the semiconductor componentsgenerate white light having a similar or identical color locus and/orhaving a similar or identical color temperature during operation.

FIGS. 8 and 9 show views of an optoelectronic semiconductor componentdescribed here in a schematic perspective illustration. FIG. 8 shows thesemiconductor component from the top side 2 a of the semiconductor chip2. The semiconductor component comprises precisely one semiconductorchip 2 completely surrounded by the molding compound 3 at its side areas2 c. Plated-through holes 6 are led through the molding compound 3 andconnected by electrically conductive connections 7 to contact locations4 c at the top side 2 a of the semiconductor chip 2. At the underside ofthe semiconductor component, see FIG. 9, a contact location 4 a isformed so that the semiconductor chip 2 is contact-connected on thep-side, for example. The n-side contact-connection is then effected bythe contact locations 4 b formed by the plated-through holes 6. Theshaped body 3 is likewise arranged between the plated-through holes 6and the semiconductor chip 2, the shaped body electrically insulatingthe plated-through holes 6 from the semiconductor chip 2.

As an alternative to the example shown, the semiconductor chip 2 canalso be a semi-conductor chip in which, for example, n- and p-sidecontacts are arranged jointly at the underside 2 b of the semiconductorchip. The plated-through holes 6 can be dispensed with in this case.

FIG. 10 shows, on the basis of a schematic plan view, a further exampleof a semiconductor component described here. In this example, thesemiconductor component comprises four semiconductor chips 2 connectedto one another by the shaped body 3. The semiconductor chips 2electrically conductively connect to one another by electricallyconductive connections 7 arranged at the top side 3 a of the shaped body3 and run, for example, on the outer area of the shaped body. Thesemiconductor chips connect in series by the electrically conductiveconnections 7 and electrically contact-connected by contact locations 4b formed by the plated-through holes 6 and also contact locations 4 a.

The method and semiconductor components described here aredistinguished, inter alia, by the following advantages: heat can bedissipated from the semiconductor components over the whole area via theentire underside 2 of the semiconductor chips 2.

Flip-chip contact-connection of the semiconductor component is possiblevia the plated-through holes 6. That is to say, a bonding wire, which ismechanically susceptible, can be obviated. On account of the fact that amultiplicity of semiconductor chips 2 can be surrounded with the shapedbody 3 simultaneously, a particularly cost-saving method is involved.

Presorting the optoelectronic semiconductor chips, for example, withregard to their peak wavelength enables a common phosphor layer 8 to beapplied simultaneously to all the semiconductor chips, which are thendistinguished by similar or identical emission characteristics.

Furthermore, a semiconductor component having an almost arbitrary numberof semiconductor chips 2 can be produced in a flexible manner by themethod. The area utilization of the semiconductor component is optimal.

Our methods and components are not restricted to the examples by thedescription on the basis of those examples. Rather, the disclosureencompasses any novel feature and also any combination of features,which, in particular, includes any combination of features in theappended claims, even if the feature or combination itself is notexplicitly specified in the claims or examples.

The invention claimed is:
 1. An optoelectronic semiconductor componentcomprising: an optoelectronic semiconductor chip having a top area at atop side, a bottom area at an underside, and side areas connecting saidtop area and said bottom area; electrical contact locations at the toparea or at the bottom area of the optoelectronic semiconductor chip; andan electrically insulating shaped body, wherein the optoelectronicsemiconductor chip is a flip-chip having said electrical contractlocations only at one side, either the underside or the top side, theshaped body surrounds the optoelectronic semiconductor chip at its sideareas, and the shaped body is free of any conductive element thatelectrically connects the optoelectronic semiconductor chip.
 2. Theoptoelectronic semiconductor component according to claim 1, wherein theelectrical contact locations of the optoelectronic semiconductor chipare freely accessible and the optoelectronic semiconductor component iselectrically contactable via the electrical contact locations of theoptoelectronic semiconductor chip.
 3. The optoelectronic semiconductorcomponent according to claim 1, wherein the shaped body is reflectivefor electromagnetic radiation produced during operation of theoptoelectronic semiconductor chip.
 4. The optoelectronic semiconductorcomponent according to claim 1, wherein the shaped body comprises sidesurface facing away from the side areas of the optoelectronicsemiconductor chip, and the side surfaces comprise grooves.
 5. Theoptoelectronic semiconductor component according to claim 1, furthercomprising a phosphor layer comprising phosphor particles, wherein thephosphor layer covers the shaped body and the optoelectronicsemiconductor chip and the phosphor particles absorb electromagneticradiation generated by the semiconductor chip during operation andreemit electro-magnetic radiation in a different wavelength range thanthe optoelectronic semiconductor chip.
 6. The optoelectronicsemiconductor component according to claim 5, wherein the phosphor layercovers the whole surface of the optoelectronic semiconductor chip and ofthe shaped body at sides of the optoelectronic semiconductor chip andthe shaped body facing away from the electrical contact locations. 7.The optoelectronic semiconductor component according to claim 6, whereinthe phosphor layer directly contacts the optoelectronic semiconductorchip and the shaped body.
 8. The optoelectronic semiconductor componentaccording to claim 5, wherein the phosphor layer is a ceramic laminacomprising a ceramic phosphor.
 9. The optoelectronic semiconductorcomponent according to claim 5, wherein the phosphor layer comprises amatrix material into which phosphor particles are introduced.
 10. Theoptoelectronic semiconductor component according to claim 5, wherein theshaped body comprises a first matrix material into which particles thatreflect electromagnetic radiation are introduced, the phosphor layercomprises a second matrix material into which phosphor particles areintroduced, and the first and the second matrix material are the same.11. The optoelectronic semiconductor component according to claim 1,wherein the top area and the bottom area of the optoelectronicsemiconductor chip are completely free of the shaped body.
 12. Theoptoelectronic semiconductor component according to claim 1, wherein theshaped body does not project beyond the optoelectronic semiconductorchip in a vertical direction that runs along the side areas of theoptoelectronic semiconductor chip.
 13. The optoelectronic semiconductorcomponent according to claim 1, wherein the shaped body covers the sideareas of the semiconductor chip up to a selected height such that theside areas of the semiconductor chip are free of the shaped body inplaces or the surface at the top side and the surface at the undersideof the shaped body terminates flush with the top area and bottom area ofthe semiconductor chip, respectively.
 14. An optoelectronicsemiconductor component comprising: an optoelectronic semiconductor chiphaving a top area at a top side, a bottom area at an underside, and sideareas connecting said top area and said bottom area; electrical contactlocations at the top area or at the bottom area of the optoelectronicsemiconductor chip; an electrically insulating shaped body; and aphosphor layer comprising phosphor particles, wherein the phosphor layercovers the shaped body and the optoelectronic semiconductor chip and thephosphor particles absorb electromagnetic radiation generated by thesemiconductor chip during operation and reemit electro-magneticradiation in a different wavelength range than the optoelectronicsemiconductor chip, wherein the optoelectronic semiconductor chip is aflip-chip having said electrical contract locations only at one side,either the underside or the top side, the shaped body surrounds theoptoelectronic semiconductor chip at its side areas, the shaped body isfree of a via that electrically connects the optoelectronicsemiconductor chip, and the phosphor layer comprises side surfaces, theshaped body comprises side surfaces facing away from the side areas ofthe optoelectronic semiconductor chip, and at least one side surface ofthe phosphor layer terminates flush with at least one side area of theshaped body.